www.irf.com 1 3/13/01 irf7478 smps mosfet hexfet ? power mosfet parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 7.0 i d @ t a = 70c continuous drain current, v gs @ 10v 5.6 a i dm pulsed drain current ? 56 p d @t a = 25c power dissipation ? 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? 3.7 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes ? through ? are on page 8 so-8 top view 8 12 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max (m )) )) ) i d 60v 26@v gs = 10v 4.2a 30@v gs = 4.5v 3.5a l high frequency dc-dc converters benefits applications symbol parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient ? CCC 50 c/w thermal resistance l low gate to drain charge to reduce switching losses l fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) l fully characterized avalanche voltage and current pd- 94055a downloaded from: http:///
irf7478 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 17 CCC CCC s v ds = 50v, i d = 4.2a q g total gate charge CCC 21 31 i d = 4.2a q gs gate-to-source charge CCC 4.3 CCC nc v ds = 48v q gd gate-to-drain ("miller") charge CCC 9.6 CCC v gs = 4.5v t d(on) turn-on delay time CCC 7.7 CCC v dd = 30v t r rise time CCC 2.6 CCC i d = 4.2a t d(off) turn-off delay time CCC 44 CCC r g = 6.2 t f fall time CCC 13 CCC v gs = 10v ? c iss input capacitance CCC 1740 CCC v gs = 0v c oss output capacitance CCC 300 CCC v ds = 25v c rss reverse transfer capacitance CCC 37 CCC pf ? = 1.0mhz c oss output capacitance CCC 1590 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 220 CCC v gs = 0v, v ds = 48v, ? = 1.0mhz c oss eff. effective output capacitance CCC 410 CCC v gs = 0v, v ds = 0v to 48v ? dynamic @ t j = 25c (unless otherwise specified) ns s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 4.2a, v gs = 0v ? t rr reverse recovery time CCC 52 78 ns t j = 25c, i f = 4.2a q rr reverse recoverycharge CCC 100 150 nc di/dt = 100a/s ? diode characteristics 2.3 56 a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0 .065 CCC v/c reference to 25c, i d = 1ma CCC 20 26 v gs = 10v, i d = 4.2a ? CCC 23 30 v gs = 4.5v, i d = 3.5a ? v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 48v, v gs = 0v CCC CCC 100 v ds = 48v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m symbol parameter typ. max. units e as single pulse avalanche energy ? CCC 140 mj i ar avalanche current ? CCC 4.2 a downloaded from: http:///
irf7478 www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.7v fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 7.0a 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 1 10 100 i d , drain-to-source current ( ) t j = 25c t j = 150c v ds = 25v 20s pulse width downloaded from: http:///
irf7478 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 4.2a v = 12v ds v = 30v ds v = 48v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd downloaded from: http:///
irf7478 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///
irf7478 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs q g q gs q gd v g charge t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.9a 3.4a 4.2a 0 1 02 03 04 05 06 0 i d , drain current (a) 0.016 0.018 0.020 0.022 0.024 0.026 0.028 r ds (on) , drain-to-source on resistance ( ) v gs = 10v v gs = 4.5v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 r ds(on) , drain-to -source on resistance ( ) i d = 7.0a downloaded from: http:///
irf7478 www.irf.com 7 so-8 package details k x 45 c8x l8x h 0 .25 (.01 0) m a m a 0.10 (.004) b 8x 0.2 5 (.010 ) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3 x dim inc hes m illim e ter s m in m ax m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 b asic 1.27 ba sic e1 .025 b asic 0.635 ba sic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. c o n t r o ll in g d im e n s io n : in c h . 3. dimensions are show n in millimeters (inches). 4. o u tl in e c o n f o r m s to je d e c o u tl in e m s -01 2a a . dimension does not include mold protrusions m o ld p r o t r u s io n s n o t to e xc e e d 0.25 (.0 06 ). d im e n s io n s is th e le n g t h o f le a d f o r s o ld e r in g t o a s u b s tr a te .. 5 6 a1 e1 so-8 part marking downloaded from: http:///
irf7478 8 www.irf.com ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 16mh r g = 25 , i as = 4.2a. ? pulse width 400s; duty cycle 2%. ? when mounted on 1 inch square copper board ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss ? i sd 4.2a, di/dt 160a/s, v dd v (br)dss , t j 150c 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inc hes ) . 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 3/01 downloaded from: http:///
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